The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Dec. 17, 2012
Lockheed Martin Corporation, Bethesda, MD (US);
David R. Helms, Tyngsboro, MA (US);
John Ditri, Huntington Valley, PA (US);
Stuart R. Ducker, Hainesport, NJ (US);
Dana J. Sturzebecher, Cary, NC (US);
Lockheed Martin Corporation, Bethesda, MD (US);
Abstract
An integrated circuit amplifier comprises: a first planar substrate having an upper surface and a lower surface; a second planar substrate having an upper surface and a lower surface, the lower surface of the second planar substrate physically affixed to the upper surface of the first planar substrate; at least one transistor pair comprising a first and second transistor, formed in the upper surface of the second planar substrate; and a conductor electrically coupling a drain electrode of the first transistor to a source electrode of the second transistor. The first substrate material may have a higher thermal conductivity than the second substrate material. The first material may be Silicon Carbide and may have a thickness of about 10 mils. The second material may be Gallium Arsenide and may have a thickness of about 1 to 2 mils.