The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Mar. 22, 2011
Applicants:

Heny Lin, Irvine, CA (US);

Jason Zhang, Monterey Park, CA (US);

Alberto Guerra, Palos Verdes Estates, CA (US);

Inventors:

Heny Lin, Irvine, CA (US);

Jason Zhang, Monterey Park, CA (US);

Alberto Guerra, Palos Verdes Estates, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/48 (2006.01); H01L 23/495 (2006.01); H01L 23/58 (2006.01); H01L 25/18 (2006.01); H01L 23/00 (2006.01); H01L 29/778 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49562 (2013.01); H01L 25/18 (2013.01); H01L 2924/10344 (2013.01); H01L 2924/1306 (2013.01); H01L 2924/10334 (2013.01); H01L 2924/10323 (2013.01); H01L 2924/10346 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 24/49 (2013.01); H01L 24/73 (2013.01); H01L 29/778 (2013.01); H01L 29/2003 (2013.01); H01L 2224/2919 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/49111 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/10253 (2013.01); H01L 2924/1033 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/12036 (2013.01); H01L 2924/19104 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/30107 (2013.01);
Abstract

One exemplary disclosed embodiment comprises a two-terminal stacked-die package including a diode, such as a silicon diode, stacked atop a III-nitride transistor, such that a cathode of the diode resides on and is electrically coupled to a source of the III-nitride transistor. A first terminal of the package is coupled to a drain of the III-nitride transistor, and a second terminal of the package is coupled to an anode of the diode. In this manner, devices such as cascoded rectifiers may be packaged in a stacked-die form, resulting in reduced parasitic inductance and resistance, improved thermal dissipation, smaller form factor, and lower manufacturing cost compared to conventional packages.


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