The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Jan. 11, 2013
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Baik-woo Lee, Gwangmyeong-si, KR;

Young-hun Byun, Seoul, KR;

Seong-woon Booh, Yongin-si, KR;

Chang-mo Jeong, Hanam-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/40 (2006.01); H01L 21/44 (2006.01); H01L 23/498 (2006.01); H01L 21/02 (2006.01); H01L 23/00 (2006.01); H01L 23/373 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49866 (2013.01); H01L 21/02697 (2013.01); H01L 24/03 (2013.01); H01L 2224/03424 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/06181 (2013.01); H01L 2224/291 (2013.01); H01L 2224/29139 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/3511 (2013.01); H01L 23/3735 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/3011 (2013.01);
Abstract

According to example embodiments of inventive concepts, a power device includes a semiconductor structure having a first surface facing a second surface, an upper electrode, and a lower electrode. The upper electrode may include a first contact layer that is on the first surface of the semiconductor structure, and a first bonding pad layer that is on the first contact layer and is formed of a metal containing nickel (Ni). The lower electrode may include a second contact layer that is under the second surface of the semiconductor structure, and a second bonding pad layer that is under the second contact layer and is formed of a metal containing Ni.


Find Patent Forward Citations

Loading…