The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Nov. 16, 2012
Phostek, Inc., Hsinchu, TW;
Yen-Chang Hsieh, Hsinchu, TW;
Jinn Kong Sheu, Tainan, TW;
Heng Liu, Sunnyvale, CA (US);
Chun-Chao Li, Taoyuan County, TW;
Ya-Hsuan Shih, Changhua County, TW;
Chia-Nan Chen, Hsinchu County, TW;
Phostek, Inc., Hsinchu, TW;
Abstract
A semiconductor apparatus includes a p-type doped layer, an n-type doped layer, and an internal electrical connection layer that is deposited and electrically coupled between the p-type doped layer and the n-type doped layer. In one embodiment, the internal electrical connection layer includes a group IV element and a nitrogen element, and the number of atoms of the group IV element and the nitrogen element is greater than 50% of the total number of atoms in the internal electrical connection layer. In another embodiment, the internal electrical connection layer includes carbon element with a concentration greater than 10atoms/cm. In a further embodiment, the internal electrical connection layer is formed at a temperature lower than those of the p-type doped layer and the n-type doped layer.