The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Sep. 19, 2007
Jochen Beintner, Wappingers Falls, NY (US);
Thomas Ludwig, Sindelfingen, DE;
Edward Joseph Nowak, Essex Junction, VT (US);
Jochen Beintner, Wappingers Falls, NY (US);
Thomas Ludwig, Sindelfingen, DE;
Edward Joseph Nowak, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method, structure and alignment procedure, for forming a finFET. The method including, defining a first fin of the finFET with a first mask and defining a second fin of the finFET with a second mask. The structure including integral first and second fins of single-crystal semiconductor material and longitudinal axes of the first and second fins aligned in the same crystal direction but offset from each other. The alignment procedure including simultaneously aligning alignment marks on a gate mask to alignment targets formed separately by a first masked used to define the first fin and a second mask used to define the second fin.