The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Sep. 23, 2013
Applicant:
Deok-kee Kim, Yongin-si, KR;
Inventor:
Deok-Kee Kim, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/538 (2006.01); H01L 21/28 (2006.01); H01L 23/525 (2006.01); H01L 23/544 (2006.01); H01L 27/06 (2006.01); H01L 27/115 (2006.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5382 (2013.01); H01L 21/28273 (2013.01); H01L 23/5252 (2013.01); H01L 23/5256 (2013.01); H01L 23/544 (2013.01); H01L 27/0629 (2013.01); H01L 27/11526 (2013.01); H01L 27/11531 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01); H01L 29/66545 (2013.01); H01L 2223/54433 (2013.01); H01L 2223/5444 (2013.01); H01L 2223/54473 (2013.01); H01L 2924/0002 (2013.01);
Abstract
A semiconductor device includes: an e-fuse gate, a floating pattern between the e-fuse gate and an e-fuse active portion, a blocking dielectric pattern between the floating pattern and the e-fuse gate, and an e-fuse dielectric layer between the floating pattern and the e-fuse active portion. The floating pattern includes a first portion between the e-fuse gate and the e-fuse active portion and a pair of second portions extended upward along both sidewalls of the e-fuse gate from both edges of the first portion.