The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Dec. 06, 2012
Applicant:

Peking University, Beijing, CN;

Inventors:

Jinfeng Kang, Beijing, CN;

Bin Gao, Beijing, CN;

Lifeng Liu, Beijing, CN;

Xiaoyan Liu, Beijing, CN;

Assignee:

Peking University, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/24 (2006.01); H01L 45/00 (2006.01); G11C 17/06 (2006.01); G11C 13/00 (2006.01);
U.S. Cl.
CPC ...
H01L 27/2409 (2013.01); H01L 45/1253 (2013.01); G11C 13/003 (2013.01); G11C 2213/72 (2013.01); H01L 27/2463 (2013.01); G11C 13/0007 (2013.01); G11C 17/06 (2013.01); H01L 45/04 (2013.01); H01L 45/146 (2013.01); H01L 45/1683 (2013.01); H01L 27/2481 (2013.01); H01L 45/122 (2013.01);
Abstract

A resistive-switching random access memory device includes a memory cell disposed between a bit line and a word line, the memory cell having a resistive-switching element () and a Schottky diode (). The Schottky diode () and the resistive-switching element () are connected in series. The Schottky diode () includes a metal layer and a semiconductor layer contacting each other. An interface between the metal layer and the semiconductor layer has a non-planar shape.


Find Patent Forward Citations

Loading…