The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 15, 2013
Applicant:
Sensors Unlimited, Inc., Princeton, NJ (US);
Inventor:
Peter Dixon, Lawrenceville, NJ (US);
Assignee:
Sensors Unlimited, Inc., Princeton, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/06 (2012.01); H01L 31/0328 (2006.01); H01L 31/0336 (2006.01); H01L 31/072 (2012.01); H01L 31/109 (2006.01); H01L 29/06 (2006.01); H01L 31/112 (2006.01);
U.S. Cl.
CPC ...
H01L 31/1127 (2013.01);
Abstract
A low noise infrared photo detector with a vertically integrated field effect transistor (FET) structure is formed without thermal diffusion. The FET structure includes a high sensitivity photo detector layer, a charge well layer, a transfer well layer, a charge transfer gate, and a drain electrode. In an embodiment, the photo detector layer and charge well are InGaAs and the other layers are InP layers.