The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Sep. 14, 2012
Applicants:
Moojin Kim, Hwaseong-si, KR;
Jeongyun Lee, Yongin-si, KR;
Inventors:
Moojin Kim, Hwaseong-si, KR;
Jeongyun Lee, Yongin-si, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0255 (2013.01); H01L 27/0629 (2013.01);
Abstract
Semiconductor devices and methods of forming the same are provided. The semiconductor device may include a semiconductor element disposed on a substrate and including an insulating layer and a gate electrode, a doped region having a first conductivity-type on the substrate, a conductive interconnection electrically connected to the gate electrode, and a first contact plug having a second conductivity-type and electrically connecting the conductive interconnection and the doped region to each other and constituting a Zener diode by junction with the doped region.