The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Mar. 30, 2012
Anup Bhalla, Santa Clara, CA (US);
Daniel NG, Campbell, CA (US);
Tiesheng LI, San Jose, CA (US);
Sik K. Lui, Sunnyvale, CA (US);
Anup Bhalla, Santa Clara, CA (US);
Daniel Ng, Campbell, CA (US);
Tiesheng Li, San Jose, CA (US);
Sik K. Lui, Sunnyvale, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
This invention discloses a new switching device that includes a drain disposed on a first surface and a source region disposed near a second surface of a semiconductor opposite the first surface. An insulated gate electrode is disposed on top of the second surface for controlling a source to drain current and a source electrode is interposed into the insulated gate electrode for substantially preventing a coupling of an electrical field between the gate electrode and an epitaxial region underneath the insulated gate electrode. The source electrode further covers and extends over the insulated gate for covering an area on the second surface of the semiconductor to contact the source region, An epitaxial layer is disposed above and having a different dopant concentration than the drain region. The gate electrode is insulated from the source electrode by an insulation layer having a thickness depending on a Vgsmax rating of the vertical power device.