The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Oct. 09, 2013
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Ha-Jin Lim, Seoul, KR;
Jin-Ho Do, Hwaseong-si, KR;
Weon-Hong Kim, Suwon-si, KR;
Moon-Kyun Song, Anyang-si, KR;
Dae-Kwon Joo, Osan-si, KR;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/78 (2006.01); H01L 21/28 (2006.01); H01L 21/8238 (2006.01); H01L 27/108 (2006.01); H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78 (2013.01); H01L 21/28088 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 27/10873 (2013.01); H01L 27/10894 (2013.01); H01L 29/4966 (2013.01);
Abstract
Methods of manufacturing a semiconductor device include forming a gate insulation layer including a high-k dielectric material on a substrate that is divided into a first region and a second region; forming a diffusion barrier layer including a first metal on a second portion of the gate insulation layer in the second region; forming a diffusion layer on the gate insulation layer and the diffusion barrier layer; and diffusing an element of the diffusion layer into a first portion of the gate insulation layer in the first region.