The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Mar. 01, 2010
Applicants:

Wei Xia, Irvine, CA (US);

Xiangdong Chen, Irvine, CA (US);

Inventors:

Wei Xia, Irvine, CA (US);

Xiangdong Chen, Irvine, CA (US);

Assignee:

Broadcom Corporation, Irvine, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 27/108 (2006.01); H01L 21/8242 (2006.01); H01L 21/336 (2006.01); H01L 49/02 (2006.01); H01L 23/522 (2006.01); H01L 27/06 (2006.01); H01L 27/08 (2006.01);
U.S. Cl.
CPC ...
H01L 28/60 (2013.01); H01L 23/5223 (2013.01); H01L 27/0629 (2013.01); H01L 27/0805 (2013.01); H01L 27/0811 (2013.01);
Abstract

According to one embodiment, a scalable integrated MIM capacitor in a semiconductor die includes a high-k dielectric segment over a substrate and a metal segment over the high-k dielectric segment, where the metal segment forms a capacitor terminal of the integrated MIM capacitor. The capacitor further includes a filler laterally separating consecutive capacitor terminals, where the filler can be used as a capacitor dielectric of the integrated MIM capacitor. In one embodiment, the metal segment comprises a gate metal. In another embodiment, the integrated MIM capacitor is formed substantially concurrently with one or more transistors without requiring additional fabrication process steps.


Find Patent Forward Citations

Loading…