The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Oct. 11, 2011
Gilberto Curatola, Korbek-lo, BE;
Dusan Golubovic, Leuven, BE;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Guillaume Boccardi, Woluwe-Saint-Lambert, BE;
Hans Mertens, Leuven, BE;
Gilberto Curatola, Korbek-lo, BE;
Dusan Golubovic, Leuven, BE;
Johannes Josephus Theodorus Marinus Donkers, Valkenswaard, NL;
Guillaume Boccardi, Woluwe-Saint-Lambert, BE;
Hans Mertens, Leuven, BE;
NXP B.V., Eindhoven, NL;
Abstract
A tunnel field effect transistor and a method of making the same. The transistor includes a semiconductor substrate. The transistor also includes a gate located on a major surface of the substrate. The transistor further includes a drain of a first conductivity type. The transistor also includes a source of a second conductivity type extending beneath the gate. The source is separated from the gate by a channel region and a gate dielectric. The transistor is operable to allow charge carrier tunnelling from an inversion layer through an upper surface of the source.