The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Mar. 21, 2011
Applicants:

Yosuke Akimoto, Kanagawa-ken, JP;

Akihiro Kojima, Kanagawa-ken, JP;

Miyuki Izuka, Kanagawa-ken, JP;

Yoshiaki Sugizaki, Kanagawa-ken, JP;

Inventors:

Yosuke Akimoto, Kanagawa-ken, JP;

Akihiro Kojima, Kanagawa-ken, JP;

Miyuki Izuka, Kanagawa-ken, JP;

Yoshiaki Sugizaki, Kanagawa-ken, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/62 (2010.01); H01L 27/15 (2006.01); H01L 33/48 (2010.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); H01L 27/153 (2013.01); H01L 33/486 (2013.01); H01L 33/0079 (2013.01); H01L 2924/0002 (2013.01);
Abstract

According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.


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