The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Oct. 22, 2010
Byoung-kwon Choo, Yongin, KR;
Kyu-sik Cho, Yongin, KR;
Won-kyu Lee, Yongin, KR;
Yong-hwan Park, Yongin, KR;
Sang-ho Moon, Yongin, KR;
Tae-hoon Yang, Yongin, KR;
Joon-hoo Choi, Yongin, KR;
Min-chul Shin, Yongin, KR;
Bo-kyung Choi, Yongin, KR;
Yun-gyu Lee, Yongin, KR;
Byoung-Kwon Choo, Yongin, KR;
Kyu-Sik Cho, Yongin, KR;
Won-Kyu Lee, Yongin, KR;
Yong-Hwan Park, Yongin, KR;
Sang-Ho Moon, Yongin, KR;
Tae-Hoon Yang, Yongin, KR;
Joon-Hoo Choi, Yongin, KR;
Min-Chul Shin, Yongin, KR;
Bo-Kyung Choi, Yongin, KR;
Yun-Gyu Lee, Yongin, KR;
Samsung Display Co., Ltd., Gyeonggi-do, KR;
Abstract
A thin film transistor (TFT) and an organic light emitting display device having the same are disclosed. In one embodiment, a TFT includes a gate electrode formed on a substrate. A gate insulating layer is formed on the substrate having the gate electrode. An active layer is formed on the gate insulating layer. A source electrode is formed over the active layer. A drain electrode is formed to substantially surround at least three surfaces of the source electrode on the active layer.