The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Sep. 21, 2011
Chihiro Imamura, Tokyo, JP;
Yukari Miyairi, Ueda, JP;
Hiroaki Koyama, Nonoichi, JP;
Toppan Printing Co., Ltd., Tokyo, JP;
Abstract
A thin film transistor includes, on an insulating substrate, at least: a gate electrode; a gate insulating layer; a source electrode; a drain electrode; a metal oxide layer including a semiconductor region and an insulating region, each of the semiconductor region and the insulating region being composed of a same metal oxide material; and an insulating protective layer. The semiconductor region includes a region between the source electrode and the drain electrode, and is overlaid on a part of each of them. The semiconductor region is formed between the gate insulating layer and the insulating protective layer to abut on at least one of them. The electric conductivity of the semiconductor region is higher than that of the insulating region.