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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8963119 B1

PDFFull Text
Date of Patent:
Feb. 24, 2015

Filed:

Mar. 04, 2011

Semiconductor nanocrystal, method of manufacture thereof and articles including the same

Applicants:

Eun-joo Jang, Suwon-si, KR;

Shin-ae Jun, Seongnam-si, KR;

Sang-wook Kim, Suwon-si, KR;

Sung-woo Kim, Suwon-si, KR;

Inventors:

Eun-Joo Jang, Suwon-si, KR;

Shin-Ae Jun, Seongnam-si, KR;

Sang-Wook Kim, Suwon-si, KR;

Sung-Woo Kim, Suwon-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Cantor Colburn LLP

Primary Examiner:

Ori Nadav

Int. Cl.
CPC ...
H01L 33/24 (2010.01); H01L 21/02 (2006.01); B82Y 30/00 (2011.01); B82Y 40/00 (2011.01); C01G 9/00 (2006.01); C09K 11/02 (2006.01); C09K 11/56 (2006.01); C09K 11/70 (2006.01); C09K 11/88 (2006.01); H01L 51/50 (2006.01); H05B 33/14 (2006.01); H01L 27/32 (2006.01); H01L 33/50 (2010.01);
U.S. Cl.
CPC ...
H01L 21/02601 (2013.01); B82Y 30/00 (2013.01); B82Y 40/00 (2013.01); C01G 9/006 (2013.01); C09K 11/02 (2013.01); H01L 21/024 (2013.01); H01L 21/02409 (2013.01); H01L 21/02455 (2013.01); H01L 21/02461 (2013.01); H01L 21/02538 (2013.01); H01L 21/02551 (2013.01); H01L 21/02557 (2013.01); H01L 21/02628 (2013.01); C09K 11/565 (2013.01); C09K 11/70 (2013.01); C09K 11/883 (2013.01); H01L 51/502 (2013.01); H05B 33/14 (2013.01); H01L 27/322 (2013.01); H01L 33/502 (2013.01);
Abstract

A semiconductor nanocrystal including a core including ZnSe, ZnTe, ZnS, ZnO, or a combination comprising at least one of the foregoing, wherein the core has a diameter of about 2 nanometers to about 5 nanometers and an emitted light wavelength of about 405 nanometers to about 530 nanometers; and a first layer disposed on the core, the first layer including a Group III-V semiconductor, wherein the semiconductor nanocrystal has a full width at half maximum of an emitted light wavelength of less than or equal to about 60 nanometers.

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