The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Oct. 30, 2012
Applicant:

Agency for Defense Development, Daejeon, KR;

Inventors:

Chi-Yeon Kim, Daegu, KR;

Kang-Il Lee, Seoul, KR;

Sun-Ho Kim, Daejeon, KR;

Hyun-Jin Choi, Daejeon, KR;

Nam-Hwan Kim, Daejeon, KR;

Sang-Gu Kang, Daejeon, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01J 5/24 (2006.01); G01J 5/20 (2006.01); G01J 1/46 (2006.01); G01J 5/00 (2006.01);
U.S. Cl.
CPC ...
G01J 5/24 (2013.01); G01J 5/20 (2013.01); G01J 1/46 (2013.01); G01J 2005/0077 (2013.01); G01J 2005/202 (2013.01);
Abstract

A signal detecting circuit of an infrared sensor includes: a cell array in which bolometers sensing infrared rays and outputting signal currents are arranged in an N×M format; a level generator that outputs a plurality of bias voltages corresponding to a plurality of bias levels; N resistor non-uniformity correcting circuits that are located in a column direction of the cell array and supply different bias voltages to each of the bolometers; M resistor non-uniformity correcting circuits that are located in a row direction of the cell array and supply different bias voltages to each of the bolometers; a control unit that sets a bias voltage level of each resistor non-uniformity correcting circuit to correct the resistor non-uniformity of the cell array; and N integrators that integrate the signal currents output from the cell array.


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