The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Oct. 22, 2010
Applicants:

Richard A. Klenkler, Oakville, CA;

Avery P. Yuen, Mississauga, CA;

Nathan M. Bamsey, Burlington, CA;

Inventors:

Richard A. Klenkler, Oakville, CA;

Avery P. Yuen, Mississauga, CA;

Nathan M. Bamsey, Burlington, CA;

Assignee:

Xerox Corporation, Norwalk, CT (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 51/42 (2006.01); H01L 51/00 (2006.01); B82Y 10/00 (2011.01);
U.S. Cl.
CPC ...
H01L 51/424 (2013.01); H01L 51/0078 (2013.01); H01L 51/4246 (2013.01); B82Y 10/00 (2013.01); H01L 51/0046 (2013.01); H01L 2251/308 (2013.01); Y02E 10/549 (2013.01);
Abstract

A photovoltaic device is disclosed. The photovoltaic device includes a substrate, an anode, a cathode, two semiconducting layers, and an electron transporting layer. The first semiconducting layer comprises a first metallophthalocyanine. The second semiconducting layer includes a blend of a second metallophthalocyanine with an electron acceptor. The second semiconducting layer is located between the first semiconducting layer and the electron transporting layer. The first and second metallophthalocyanines have different valences. The complementary absorption profiles of these layers result in a device having greater absorption and efficiency than expected, without the need for a recombination layer or the need to match current between layers.


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