The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Feb. 10, 2012
Rebecca Elizabeth Jones-albertus, Mountain View, CA (US);
Ferran Suarez Arias, San Jose, CA (US);
Michael West Wiemer, Campbell, CA (US);
Michael J. Sheldon, San Jose, CA (US);
Homan B. Yuen, Sunnyvale, CA (US);
Rebecca Elizabeth Jones-Albertus, Mountain View, CA (US);
Ferran Suarez Arias, San Jose, CA (US);
Michael West Wiemer, Campbell, CA (US);
Michael J. Sheldon, San Jose, CA (US);
Homan B. Yuen, Sunnyvale, CA (US);
Solar Junction Corporation, San Jose, CA (US);
Abstract
Photovoltaic cells with one or more subcells are provided with a wide band gap, pseudomorphic window layer of at least 15 nm in thickness and with an intrinsic material lattice constant that differs by at least 1% from an adjacent emitter layer. This window layer has a higher band gap than a window layer with substantially the same intrinsic material lattice constant as the adjacent emitter layer, which increases the light transmission through the window, thereby increasing the current generation in the solar cell. The quality of being pseudomorphic material preserves a good interface between the window and the emitter, reducing the minority carrier surface recombination velocity. A method is provided for building a wide band gap, pseudomorphic window layer of a photovoltaic cell that has an intrinsic material lattice constant that differs by at least 1% from the adjacent emitter layer.