The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Oct. 26, 2012
Applicant:

Commissariat Á L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventors:

Thomas Jouanneau, Sassenage, FR;

Yann Bogumilowicz, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/26 (2006.01); H01L 21/302 (2006.01); H01L 21/324 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/302 (2013.01); H01L 21/3245 (2013.01); H01L 21/3247 (2013.01); H01L 21/76254 (2013.01); H01L 21/26506 (2013.01);
Abstract

The process for smoothing a rough surface of a first substrate made of a semiconductor alloy based on at least two elements chosen from Ga, As, Al, In, P and N is implemented by placing a second substrate facing the first substrate so that the rough surface is placed facing a surface of the second substrate. The first and second substrates are separated by a distance d of at least 10 μm, the facing portions of the two substrates defining a confinement space. The first substrate is then heated so as to partially desorb one of the elements of said alloy and to reach the saturated vapor pressure of this element in the confinement space and to obtain a surface atom mobility that is sufficient to reduce the roughness of the rough surface.


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