The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Feb. 24, 2010
Applicants:

Abdennour Abbas, Villeneuve d'Ascq, FR;

Didier Guillochon, Maroq en Baroeul, FR;

Bertrand Bocquet, Villeneuve d'Ascq, FR;

Philippe Supiot, Mons en Boroeul, FR;

Inventors:

Abdennour Abbas, Villeneuve d'Ascq, FR;

Didier Guillochon, Maroq en Baroeul, FR;

Bertrand Bocquet, Villeneuve d'Ascq, FR;

Philippe Supiot, Mons en Boroeul, FR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/311 (2006.01); H01L 29/06 (2006.01); B81C 1/00 (2006.01);
U.S. Cl.
CPC ...
B81C 1/00071 (2013.01); B81B 2201/0214 (2013.01); B81B 2201/058 (2013.01); B81B 2203/0338 (2013.01); B81C 2201/0108 (2013.01); B81C 2201/018 (2013.01);
Abstract

The present invention relates to a process for fabricating microchannels on a substrate and to a substrate comprising these microchannels, the invention being especially applicable to the fabrication of microstructured substrates for microelectronic, microfluidic and/or micromechanical systems. The process includes a step (a) of producing at least one or at least two patternson the surface of a bottom layerand a step (b) of depositing, on top of the bottom layer and the pattern or patterns, a layerof polymer material obtained by polymerizing an organic or organometallic monomer that contains siloxane functional groups, for example tetramethyldisiloxane, in a plasma-enhanced, optionally remote plasma-enhanced, chemical vapor deposition reactor (PECVD or optionally RPECVD) reactor. The layer of polymer material is deposited so as to create, in place of the pattern and after development by decomposing this pattern, or between the two patterns without development/decomposition, a channelclosed over at least part of its length.


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