The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Feb. 13, 2014
Applicant:
Piquant Research Llc, Wilmington, DE (US);
Inventor:
Daniel Inns, Palo Alto, CA (US);
Assignee:
Piquant Research LLC, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/228 (2006.01); H01L 21/22 (2006.01); H01L 21/225 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/228 (2013.01); H01L 21/2225 (2013.01); H01L 21/2255 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); Y02E 10/547 (2013.01);
Abstract
A method selectively diffuses dopants into a substrate wafer. The method comprises blanket depositing a doped liquid precursor including dopants on a surface of the substrate wafer to create a doped film on the surface of the substrate wafer, selectively forming a diffusion source in the doped film to selectively diffuse the dopants into the substrate wafer, and heating the doped film on the substrate wafer, wherein said heating the doped film diffuses the dopants from the doped film into the substrate wafer.