The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Aug. 30, 2012
Applicants:
Sung-soo Park, Seongnam-si, KR;
Moon-sang Lee, Seoul, KR;
Inventors:
Sung-soo Park, Seongnam-si, KR;
Moon-sang Lee, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/36 (2006.01); H01L 21/02 (2006.01); C30B 25/18 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0254 (2013.01); C30B 25/183 (2013.01); C30B 29/403 (2013.01); H01L 21/0242 (2013.01); H01L 21/02458 (2013.01); H01L 21/02513 (2013.01); H01L 21/0262 (2013.01); H01L 21/02645 (2013.01);
Abstract
Methods of growing nitride semiconductor layers including forming nitride semiconductor dots on a substrate and growing a nitride semiconductor layer on the nitride semiconductor dots. The nitride semiconductor layer may be separated from the substrate to be used as a nitride semiconductor substrate.