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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8962456 B1

PDFFull Text
Date of Patent:
Feb. 24, 2015

Filed:

Jul. 26, 2013

Group iii nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device

Applicant:

Toyoda Gosei Co., Ltd., Kiyosu-shi, JP;

Inventors:

Shiro Yamazaki, Kiyosu, JP;

Miki Moriyama, Kiyosu, JP;

Assignee:

Toyoda Gosei Co., Ltd., Kiyosu-Shi, Aichi-Ken, JP;

Attorney:

McGinn IP Law Group, PLLC

Primary Examiner:

Lex Malsawma

Int. Cl.
CPC ...
H01L 21/20 (2006.01); H01L 21/36 (2006.01); H01L 29/20 (2006.01); C30B 9/12 (2006.01); C30B 29/64 (2006.01); C30B 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01); H01L 29/78 (2006.01); C30B 9/10 (2006.01); C30B 19/02 (2006.01); C30B 19/06 (2006.01); C30B 19/10 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
C30B 9/12 (2013.01); C30B 29/64 (2013.01); C30B 29/406 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); C30B 9/10 (2013.01); C30B 19/02 (2013.01); C30B 19/06 (2013.01); C30B 19/10 (2013.01); C30B 29/403 (2013.01); H01L 29/2003 (2013.01); H01L 33/0075 (2013.01);
Abstract

Objects of the present invention are to provide a method for producing a Group III nitride semiconductor single crystal, which method enables production of a Group III nitride semiconductor single crystal having a flat surface by means of a crucible having any inside diameter; to provide a self-standing substrate obtained from the Group III nitride semiconductor single crystal; and to provide a semiconductor device employing the self-standing substrate. The production method includes adding the template, a flux, and semiconductor raw materials to a crucible and growing a Group III nitride semiconductor single crystal while the crucible is rotated. In the growth of the semiconductor single crystal, the crucible having an inside diameter R (mm) is rotated at a maximum rotation speed ω (rpm) satisfying the following conditions:ω1−4≦ω≦ω1+4;ω1=10; andlog()+3.1.

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