The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Oct. 26, 2011
Da Zhang, Austin, TX (US);
Konstantin V. Loiko, Austin, TX (US);
Spencer E. Williams, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Da Zhang, Austin, TX (US);
Konstantin V. Loiko, Austin, TX (US);
Spencer E. Williams, Austin, TX (US);
Brian A. Winstead, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A first transistor and a second transistor are formed with different threshold voltages. A first gate is formed over the first region of a substrate for a first transistor and a second gate over the second region for a second transistor. The first region is masked. A threshold voltage of the second transistor is adjusted by implanting through the second gate while masking the first region. Current electrode regions are formed on opposing sides of the first gate and current electrode regions on opposing sides of the second gate.