The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Jul. 20, 2012
Gregory Dix, Tempe, AZ (US);
Leighton E. Mckeen, Gilbert, AZ (US);
Ian Livingston, Chandler, AZ (US);
Roger Melcher, Gilbert, AZ (US);
Rohan Braithwaite, Gilbert, AZ (US);
Gregory Dix, Tempe, AZ (US);
Leighton E. McKeen, Gilbert, AZ (US);
Ian Livingston, Chandler, AZ (US);
Roger Melcher, Gilbert, AZ (US);
Rohan Braithwaite, Gilbert, AZ (US);
Microchip Technology Incorporated, Chandler, AZ (US);
Abstract
At least one N-well implant having a different doping level is formed in a silicon substrate by first etching the substrate with an alignment target for aligning future process masks thereto. This alignment target is outside of any active device area. By using at least one N-well implant having a different doping level in combination with the substrate, a graded junction in the drift area of a metal oxide semiconductor (MOS) field effect transistor (FET) can be created and a pseudo Ldd structure may be realized thereby.