The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Feb. 21, 2011
Applicant:

Hans-joachim Krokoszinski, Nussloch, DE;

Inventor:
Assignee:

Robert Bosch GmbH, Stuttgart, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 31/18 (2006.01); C23C 10/30 (2006.01); C23C 26/00 (2006.01); H01L 31/0224 (2006.01); H01L 31/068 (2012.01); H01L 31/0216 (2014.01);
U.S. Cl.
CPC ...
H01L 31/1868 (2013.01); C23C 10/30 (2013.01); C23C 26/00 (2013.01); H01L 31/022425 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); H01L 31/02167 (2013.01); Y02E 10/547 (2013.01);
Abstract

A method for manufacturing a solar cell from a p-doped or n-doped silicon substrate having a first main surface used as an incident-light side and a second main surface used as a back side includes: depositing a thin layer onto the second main surface; depositing a dielectric, glass-forming paste onto the second main surface and drying it, in order to cover the thin layer; heating and/or sintering the paste on the second main surface at temperatures greater than app. 577° C., to produce an aluminum dopant layer in the second main surface; and removing the glass layer formed during the heating and/or sintering, as well as an aluminum-silicon eutectic layer formed during the heating and/or sintering, from the second main surface.


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