The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 24, 2015

Filed:

Dec. 09, 2010
Applicants:

Mehrdad M Moslehi, Los Altos, CA (US);

Pawan Kapur, Palo Alto, CA (US);

Karl-josef Kramer, San Jose, CA (US);

David Xuan-qi Wang, Fremont, CA (US);

Sean Seutter, San Jose, CA (US);

Virenda V Rana, Los Gatos, CA (US);

Anthony Calcaterra, Milpitas, CA (US);

Emmanuel Van Kerschaver, Los Altos, CA (US);

Inventors:

Mehrdad M Moslehi, Los Altos, CA (US);

Pawan Kapur, Palo Alto, CA (US);

Karl-Josef Kramer, San Jose, CA (US);

David Xuan-Qi Wang, Fremont, CA (US);

Sean Seutter, San Jose, CA (US);

Virenda V Rana, Los Gatos, CA (US);

Anthony Calcaterra, Milpitas, CA (US);

Emmanuel Van Kerschaver, Los Altos, CA (US);

Assignee:

Solexel, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/02 (2006.01); H01L 31/0352 (2006.01); H01L 31/0392 (2006.01); H01L 31/068 (2012.01); H01L 31/0236 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0201 (2013.01); H01L 31/035281 (2013.01); H01L 31/03529 (2013.01); H01L 31/03921 (2013.01); H01L 31/068 (2013.01); H01L 31/1804 (2013.01); H01L 31/022441 (2013.01); H01L 31/02363 (2013.01); H01L 31/18 (2013.01); Y02E 10/52 (2013.01); Y02E 10/547 (2013.01);
Abstract

Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.


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