The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Sep. 05, 2012
Hiroto Nishii, Ibaraki, JP;
Shigenori Morita, Ibaraki, JP;
Seiki Teraji, Ibaraki, JP;
Kazuhito Hosokawa, Ibaraki, JP;
Takashi Minemoto, Kusatsu, JP;
Hiroto Nishii, Ibaraki, JP;
Shigenori Morita, Ibaraki, JP;
Seiki Teraji, Ibaraki, JP;
Kazuhito Hosokawa, Ibaraki, JP;
Takashi Minemoto, Kusatsu, JP;
Nitto Denko Corporation, Ibaraki-shi, JP;
Abstract
A CIGS film production method is provided which ensures that a CIGS film having a higher conversion efficiency can be produced at lower costs at higher reproducibility even for production of a large-area device. A CIGS solar cell production method is also provided for producing a CIGS solar cell including the CIGS film. The CIGS film production method includes: a stacking step of stacking a layer (A) containing indium, gallium and selenium and a layer (B) containing copper and selenium in a solid phase in this order over a substrate; and a heating step of heating a stacked structure including the layer (A) and the layer (B) to melt a compound of copper and selenium of the layer (B) into a liquid phase to thereby diffuse copper from the layer (B) into the layer (A) to permit crystal growth to provide a CIGS film.