The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Jun. 27, 2012
Satyavolu S. Papa Rao, Poughkeepsie, NY (US);
Kathryn C. Fisher, Sunnyvale, CA (US);
Harold J. Hovel, Katonah, NY (US);
Qiang Huang, Croton on Hudson, NY (US);
Susan Huang, Mount Kisco, NY (US);
Young-hee Kim, Mohegan Lake, NY (US);
Satyavolu S. Papa Rao, Poughkeepsie, NY (US);
Kathryn C. Fisher, Sunnyvale, CA (US);
Harold J. Hovel, Katonah, NY (US);
Qiang Huang, Croton on Hudson, NY (US);
Susan Huang, Mount Kisco, NY (US);
Young-Hee Kim, Mohegan Lake, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A stack of a first anti-reflective coating (ARC) layer and a titanium layer is formed on a front surface of a semiconductor substrate including a p-n junction, and is subsequently patterned so that a semiconductor surface is physically exposed in metal contact regions of the front surface of the semiconductor substrate. The remaining portion of the titanium layer is converted into a titania layer by oxidation. A metal layer is plated on the metal contact regions, and a copper line is subsequently plated on the metal layer or a metal semiconductor alloy derived from the metal layer. A second ARC layer is deposited over the titania layer and the copper line, and is subsequently patterned to provide electrical contact to the copper line.