The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 24, 2015
Filed:
Nov. 21, 2011
Applicant:
Wensheng Wang, Yokohama, JP;
Inventor:
Wensheng Wang, Yokohama, JP;
Assignee:
Fujitsu Semiconductor Limited, Yokohama, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/115 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11507 (2013.01); H01L 28/56 (2013.01);
Abstract
A ferroelectric capacitor formed above a semiconductor substrate includes a lower electrode, a dielectric film (ferroelectric film) having ferroelectric characteristics, and an upper electrode. The upper electrode includes a conductive oxide film made of a ferroelectric material to which conductivity is provided by adding a conductive material such as Ir, and the conductive oxide film is in contact with the dielectric film.