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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8961745 B1

PDFFull Text
Date of Patent:
Feb. 24, 2015

Filed:

Jan. 28, 2014

Plant and method for producing a semiconductor film

Applicant:

Voltasolar S.r.l., Turate, IT;

Inventors:

Maurizio Filippo Acciarri, Milan, IT;

Simona Olga Binetti, Milan, IT;

Leonida Miglio, Como, IT;

Maurilio Meschia, Asti, IT;

Raffaele Moneta, Mozzate, IT;

Stefano Marchionna, Arsizio, IT;

Assignee:

VOLTASOLAR S.r.l., Turate (Como), IT;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Rodney McDonald

Int. Cl.
CPC ...
C23C 14/34 (2006.01); H01J 37/34 (2006.01); H01L 21/67 (2006.01); C23C 14/00 (2006.01); C23C 14/06 (2006.01); C23C 14/16 (2006.01); C23C 14/56 (2006.01); C23C 14/58 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6719 (2013.01); C23C 14/0021 (2013.01); C23C 14/0623 (2013.01); C23C 14/165 (2013.01); C23C 14/562 (2013.01); C23C 14/5866 (2013.01); H01J 37/34 (2013.01); H01J 37/3429 (2013.01);
Abstract

The plant is suitable to produce a semiconductor film () having a desired thickness and consisting substantially of a compound including at least one element for each of the groups 11, 13, and 16 of the periodic classification of elements. The plant comprises an outer case () embedding a chamber () divided into one deposition zone () and one evaporation zone (), which are separated by a screen () interrupted by at least one cylindrical transfer member provided with actuation means rotating about its axis (). To the deposition zone () a magnetron device () is associated, for the deposition by sputtering of at least one element for each of the groups 11 and 13 on the side surface (α) of the cylindrical member that is in the deposition zone (). To the evaporation zone () a cell () for the evaporation of at least one element of the group 16 is associated, and such an evaporation zone () houses a substrate () on which the film () is produced. The cylindrical member () is provided with heating means of a portion of the side surface thereof that is from time to time in the evaporation zone (), so that the elements of the groups 11 and 13 previously deposited on this surface evaporate and deposit on the substrate () together with the at least one element of the group 16 forming the film ().

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