The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Feb. 17, 2010
Applicant:

Qi-de Qian, Santa Clara, CA (US);

Inventor:

Qi-De Qian, Santa Clara, CA (US);

Assignee:

Qi-De Qtan, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01);
U.S. Cl.
CPC ...
G06F 17/5077 (2013.01); G06F 2217/12 (2013.01);
Abstract

A method and system for improving the yield of integrated devices is invented by adaptively selecting contact and via sizes. According to this invention, the drawn size of via holes in a design layout is selected based on its neighboring layout geometries. The invention comprises identifying the minimal space required for placing a via; analyzing available free space for potential via size increase; identifying the proximity configuration of the via with other vias on the via layer; selecting an appropriate via size based on the free space and proximity configuration to create an improved design layout; and fabricate the new layout with model based proximity correction such that vias of a plurality of sizes are reproduced on silicon within predetermined tolerances.


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