The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Apr. 19, 2011
Applicants:
Jae-hyun Park, Yongin-si, KR;
Jae-hee OH, Seongnam-si, KR;
Sung-won Kim, Gwangju, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H01L 23/50 (2006.01); G11C 8/14 (2006.01); G11C 13/00 (2006.01); H01L 27/24 (2006.01); H01L 27/105 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); G11C 8/14 (2013.01); G11C 13/0004 (2013.01); G11C 13/0007 (2013.01); G11C 13/0028 (2013.01); H01L 27/2436 (2013.01); H01L 27/105 (2013.01);
Abstract
A nonvolatile memory device includes multiple variable resistive elements formed on a substrate; multiple bit lines formed on the variable resistive elements, extended in a first direction, and separated from each other by a first pitch; multiple circuit word lines formed on the multiple bit lines, extended in a second direction, and separated from each other by a second pitch; and multiple circuit word lines formed on the multiple bit lines, extended in the first direction, and separated from each other by a third pitch, wherein the third pitch of the multiple circuit word lines is larger than the first pitch of the multiple bit lines.