The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Mar. 06, 2013
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Yo Sasaki, Saitama, JP;

Daisuke Hiratsuka, Kanagawa, JP;

Atsushi Yamamoto, Tokyo, JP;

Kazuya Kodani, Kanagawa, JP;

Yuuji Hisazato, Tokyo, JP;

Hitoshi Matsumura, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 23/532 (2006.01); H01L 21/768 (2006.01); H01L 21/58 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/76841 (2013.01); H01L 21/58 (2013.01); H01L 24/32 (2013.01); H01L 24/29 (2013.01); H01L 24/83 (2013.01); H01L 2924/01322 (2013.01);
Abstract

According to one embodiment, the semiconductor device in the embodiment has an assembly substrate, a semiconductor chip, and a jointing layer. The semiconductor chip is joined to the assembly substrate via the jointing layer. An intervening diffusion barrier layer may be interposed between the chip and jointing layer. The jointing layer is an alloy layer mainly made of any metal selected from Sn, Zn and In or an alloy of Sn, Zn and In, and any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V or an alloy of any metal selected from Cu, Ni, Ag, Cr, Zr, Ti and V and any metal selected from Sn, Zn and In, where the alloy has a higher melting temperature than that of Sn, Zn and In or an alloy of Sn, Zn and/or In.


Find Patent Forward Citations

Loading…