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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8957474 B1

PDFFull Text
Date of Patent:
Feb. 17, 2015

Filed:

May. 15, 2013

Mos transistors including u shaped channels regions with separated protruding portions

Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Dae-Ik Kim, Hwaseong-si, KR;

Ji-Young Kim, Yongin-si, KR;

Hyeong-Sun Hong, Seongnam-si, KR;

Assignee:

Samsung Electronics Co., Ltd., , KR;

Attorney:

Myers Bigel Sibley & Sajovec, P.A.

Primary Examiner:

Timor Karimy

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 27/02 (2006.01); H01L 27/108 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/088 (2013.01); H01L 21/823412 (2013.01); H01L 21/823437 (2013.01); H01L 21/823487 (2013.01); H01L 27/0203 (2013.01); H01L 27/10876 (2013.01); H01L 27/10891 (2013.01); H01L 29/4236 (2013.01);
Abstract

A MOS transistor, can include a u-shaped cross-sectional channel region including spaced apart protruding portions separated by a trench and connected to one another by a connecting portion of the channel region at lower ends of the spaced apart protruding portions of the channel region. First and second impurity regions can be located at opposite ends of the -shaped cross-sectional channel region and separated from one another by the trench. A gate electrode can cover at least a planar face of the u-shaped cross-sectional channel region including the spaced apart protruding portions and the connecting portion and exposing the first and second impurity regions.

Find Patent Forward Citations

Kim, Dae-Ik. (2015). Mos transistors including u shaped channels regions with separated protruding portions (U.S. Patent No. 8957474). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8957474

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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