The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

May. 31, 2012
Applicants:

Ron Naaman, Yarkona, IL;

Eyal Capua, Rehovot, IL;

Danny Bavli, Rehovot, IL;

Maria Tkachev, Rehovot, IL;

Inventors:

Ron Naaman, Yarkona, IL;

Eyal Capua, Rehovot, IL;

Danny Bavli, Rehovot, IL;

Maria Tkachev, Rehovot, IL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); G01N 27/49 (2006.01); H01L 27/28 (2006.01); G01N 27/414 (2006.01);
U.S. Cl.
CPC ...
G01N 27/4145 (2013.01);
Abstract

The invention provides a semiconductor device for the detection of an active site-containing protein or a ligand thereof in a solution, said device comprising at least one insulating or semi-insulating layer; at least one conducting semiconductor layer, two conducting pads on top of the upper layer making electrical contact with said at least one conducting semiconductor layer, such that electrical current can flow between them at a finite distance from the surface of the device; a protective molecular layer fabricated on top of said upper layer and protecting said layer from corrosion; and said ligand or active site-containing protein linked to said protective molecular layer. Exposure of said ligand or active site-containing protein to a solution containing said active site-containing protein or ligand, respectively, causes a current change through the device when a constant electric potential is applied between the two conducting pads. The semiconductor device can be seen as a molecularly controlled semiconductor resistor (MOCSER) protein sensor based on doped and undoped GaAs stack structure. The GaAs is protected against etching in aqueous environments by the protective molecular layer.


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