The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Oct. 28, 2011
Jong Lam Lee, Pohang-si, KR;
Jun Ho Son, Gyeongsan-si, KR;
Yang Hee Song, Seongnam-si, KR;
Postech Academy-Industry Foundation, Gyeongsangbuk-Do, KR;
Abstract
A method of manufacturing a light emitting diode, includes a process of forming an n-type nitride semiconductor layer, a light emitting layer, and a p-type nitride semiconductor layer on a temporary substrate, a process of forming a p-type electrode on the p-type nitride semiconductor layer, a process of forming a conductive substrate on the p-type electrode, a process of removing the temporary substrate to expose the n-type nitride semiconductor layer, a process of forming a nanoimprint resist layer on the n-type nitride semiconductor layer, a process of pressing the nanoimprint mold on the nanoimprint resist layer to transfer the nano-pattern onto the nanoimprint resist layer, and a process of separating the nanoimprint mold from the nanoimprint resist layer having the nano-pattern and etching a portion of the nanoimprint resist layer having the nano-pattern to form an n-type electrode.