The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Jun. 23, 2014
Seoul Semiconductor Co., Ltd., Ansan-si, KR;
Jacob J. Richardson, Goleta, CA (US);
Daniel Estrada, Goleta, CA (US);
Evan O'Hara, Goleta, CA (US);
Haoran Shi, Goleta, CA (US);
Shin Chanseob, Ansan-si, KR;
Yeojin Yoon, Ansan-si, KR;
Seoul Semiconductor Co., Ltd., Ansan-si, KR;
Abstract
A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer.