The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
May. 17, 2011
Applicant:
Shiro Sakai, Tokushima, JP;
Inventor:
Shiro Sakai, Tokushima, JP;
Assignee:
Seoul Viosys Co., Ltd., Ansan-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 21/36 (2006.01); H01L 29/267 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 29/16 (2006.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/267 (2013.01); H01L 21/0237 (2013.01); H01L 21/02439 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02502 (2013.01); H01L 21/02505 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 33/007 (2013.01); H01L 33/12 (2013.01); H01L 21/02521 (2013.01); H01L 29/1608 (2013.01); H01L 33/32 (2013.01);
Abstract
Embodiments of the invention provide a crystalline aluminum carbide layer, a laminate substrate having the crystalline aluminum carbide layer formed thereon, and a method of fabricating the same. The laminate substrate has a GaN layer including a GaN crystal and an AlC layer including an AlC crystal. Further, the method of fabricating the laminate substrate, which has the AlN layer including the AlN crystal and the AlC layer including the AlC crystal, includes supplying a carbon containing gas and an aluminum containing gas to grow the AlC layer.