The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Dec. 06, 2011
Masao Moriguchi, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Takatsugu Kusumi, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Masao Moriguchi, Osaka, JP;
Yohsuke Kanzaki, Osaka, JP;
Yudai Takanishi, Osaka, JP;
Takatsugu Kusumi, Osaka, JP;
Hiroshi Matsukizono, Osaka, JP;
Sharp Kabushiki Kaisha, Osaka, JP;
Abstract
A semiconductor device according to the present invention includes: a gate electrode () of a thin film transistor () and an oxygen supply layer (), the gate electrode () and the oxygen supply layer () being formed on a substrate (); a gate insulating layer () formed on the gate electrode () and the oxygen supply layer (); an oxide semiconductor layer () of the thin film transistor (), the oxide semiconductor layer () being formed on the gate insulating layer (); and a source electrode (S) and a drain electrode () of the thin film transistor (), the source electrode (S) and the drain electrode () being formed on the gate insulating layer () and the oxide semiconductor layer ().