The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 17, 2015

Filed:

Oct. 30, 2012
Applicant:

Samsung Display Co., Ltd., Yongin-City, Gyeonggi-Do, KR;

Inventors:

Byung Du Ahn, Hwaseong-si, KR;

Jun Hyung Lim, Seoul, KR;

Jin Seong Park, Cheonan-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
Abstract

A thin film transistor includes: a gate electrode on a substrate; a source electrode; a drain electrode positioned in a same layer as the source electrode and facing the source electrode; an oxide semiconductor layer positioned between the gate electrode and the source electrode or drain electrode; and a gate insulating layer positioned between the gate electrode and the source electrode or drain electrode. The oxide semiconductor layer includes titanium oxide (TiOx) doped with niobium (Nb).


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