The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Dec. 20, 2012
Applicant:
Ihp Gmbh-innovations for High Performance Microelectronics, Frankfurt, DE;
Inventors:
Wolfgang Mehr, Friedersdorf, DE;
Jaroslaw Dabrowski, Frankfurt, DE;
Max Lemme, Hagen, DE;
Gunther Lippert, Frankfurt, DE;
Grzegorz Lupina, Berlin, DE;
Johann Christoph Scheytt, Frankfurt, DE;
Assignee:
IHP GmbH—Innovations for High Performance Microelectronics, Frankfurt, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/872 (2006.01); H01L 29/73 (2006.01); H01L 29/267 (2006.01); H01L 29/40 (2006.01); H01L 29/76 (2006.01); H01L 29/16 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7317 (2013.01); H01L 29/267 (2013.01); H01L 29/402 (2013.01); H01L 29/7606 (2013.01); H01L 29/1606 (2013.01); H01L 29/165 (2013.01);
Abstract
A hot hole transistor with a graphene base comprises on a substrate an emitter layer, a collector layer, and a base layer that comprises a graphene layer, wherein an emitter barrier layer is arranged between the base layer and the emitter layer, and a collector barrier layer is arranged between the base and the collector layers and adjacent to the graphene layer.