The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Jan. 14, 2013
Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;
Institut Polytechnique DE Grenoble, Grenoble, FR;
Luca Perniola, Noyarey, FR;
Giovanni Betti Beneventi, Polinago, IT;
Abstract
The memory cell includes a memory area which is formed in a phase-change material pattern based on chalcogenide. An electric p/n-type junction is series-connected between electrodes. The p/n junction is formed in a crystalline area by the interface between first and second doped areas of the phase-change material pattern. The memory area is formed in one of the two doped areas, at a distance from the junction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile