The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8956982 B1

PDF
Full Text
Expired
Date of Patent:
Feb. 17, 2015

Filed:

Nov. 18, 2011
Applicants:

Shuichi Tsubata, Kanagawa, JP;

Hirotaka Ogihara, Kanagawa, JP;

Inventors:

Shuichi Tsubata, Kanagawa, JP;

Hirotaka Ogihara, Kanagawa, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/31 (2006.01); H01L 21/033 (2006.01); H01L 27/10 (2006.01); H01L 45/00 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0332 (2013.01); H01L 27/101 (2013.01); H01L 45/04 (2013.01); H01L 45/1233 (2013.01); H01L 45/146 (2013.01); H01L 45/1675 (2013.01); H01L 27/2409 (2013.01); H01L 27/2481 (2013.01);
Abstract

According to one embodiment, a stacked film including at least a silicon oxide film is formed by stacking a plurality of films formed of different materials and a hard mask pattern is formed on the stacked film. Then, a stacked film pattern of a predetermined shape is formed by performing anisotropic etching on the stacked film by using the hard mask pattern as an etching mask and the hard mask pattern is removed. The hard mask pattern is formed by stacking at least one first hard mask layer and at least one second hard mask layer. The first hard mask layer is formed of a material having a higher removability in wet etching than the second hard mask layer. The first hard mask layer is arranged immediately above the stacked film.


Find Patent Forward Citations

Tsubata, Shuichi. (2015). Manufacturing method of semiconductor device (U.S. Patent No. 8956982). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8956982

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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