The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Jul. 30, 2007
Applicants:
Hongjie Dai, Cupertino, CA (US);
Guangyu Zhang, Palo Alto, CA (US);
Pengfei Qi, Palo Alto, CA (US);
Inventors:
Assignee:
The Board of Trustees of the Leland Stanford Junior Univerity, Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/36 (2006.01); H01L 51/00 (2006.01); H01L 51/05 (2006.01);
U.S. Cl.
CPC ...
H01L 51/0048 (2013.01); H01L 51/0558 (2013.01);
Abstract
Nanotube devices and approaches therefore involve the formation and/or implementation of substantially semiconducting single-walled nanotubes. According to an example embodiment of the present invention, substantially semiconducting single-walled nanotubes couple circuit nodes in an electrical device. In some applications, semiconducting and metallic nanotubes having a diameter in a threshold range are exposed to an etch gas that selectively etches the metallic nanotubes, leaving substantially semiconducting nanotubes coupling the circuit nodes.