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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8956967 B1

PDFFull Text
Date of Patent:
Feb. 17, 2015

Filed:

Sep. 10, 2012

Method of forming an interconnection structure

Applicants:

Shirou Ozaki, Kawasaki, JP;

Yoshihiro Nakata, Kawasaki, JP;

Inventors:

Shirou Ozaki, Kawasaki, JP;

Yoshihiro Nakata, Kawasaki, JP;

Assignee:

Fujitsu Limited, Kawasaki, JP;

Attorney:

Westerman, Hattori, Daniels & Adrian, LLP

Primary Examiner:

Alonzo Chambliss

Int. Cl.
CPC ...
H01L 21/4763 (2006.01); H01L 23/12 (2006.01); H01L 23/532 (2006.01); H01L 21/02 (2006.01); H01L 21/67 (2006.01); H01L 21/768 (2006.01); H01L 23/485 (2006.01); H01L 21/3105 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53238 (2013.01); H01L 21/02063 (2013.01); H01L 21/67069 (2013.01); H01L 21/67109 (2013.01); H01L 21/76807 (2013.01); H01L 21/76814 (2013.01); H01L 23/485 (2013.01); H01L 23/53295 (2013.01); H01L 21/3105 (2013.01); H01L 21/76843 (2013.01); H01L 2924/0002 (2013.01);
Abstract

A method of forming an interconnection structure includes forming an opening in an insulation film by a dry etching process that uses an etching gas containing fluorine; cleaning a bottom surface and a sidewall surface of the opening by exposing to a superheated steam; covering the bottom surface and the sidewall surface of the opening with a barrier metal film; depositing a conductor film on the insulation film via the barrier metal film to fill the opening with the conductor film; forming an interconnection pattern by the conductor film in the opening by polishing the conductor film and the barrier metal film underneath the conductor film by a chemical mechanical polishing process until a surface of the insulation film is exposed.

Find Patent Forward Citations

Ozaki, Shirou. (2015). Method of forming an interconnection structure (U.S. Patent No. 8956967). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8956967

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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