The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Nov. 12, 2013
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Xinpeng Wang, Shanghai, CN;
Steven Zhang, Shanghai, CN;
Abstract
Semiconductor devices and fabrication methods are provided. A fin can be formed on a semiconductor substrate, a gate can be formed across the fin, and sidewall spacers can be formed across the fin on both sides of the gate. A dummy contact can be formed across the fin and on each of the both sides of the sidewall spacers. After forming an interlayer dielectric layer on the semiconductor substrate, the dummy contact can be removed to form a contact trench. The dummy contact is made of a material having an etch selectivity sufficiently higher than the fin such that the removing of the dummy contact generates substantially no damage to the fin. A conductive material can be filled in the contact trench to form a trench metal contact.