The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 17, 2015
Filed:
Mar. 09, 2012
Applicant:
Min Gyu Koo, Icheon-si, KR;
Inventor:
Min Gyu Koo, Icheon-si, KR;
Assignee:
SK Hynix Inc., Gyeonggi-do, KR;
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/76 (2006.01); H01L 27/115 (2006.01); H01L 21/02 (2006.01); H01L 21/266 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/0206 (2013.01); H01L 21/266 (2013.01);
Abstract
A method of manufacturing semiconductor devices includes forming a plurality of patterns spaced apart from each other on a semiconductor substrate, forming a filling layer, not removed in a subsequent process of forming a mask pattern and where the filling layer formed to have a lower height than the plurality of patterns, between the plurality of patterns, forming a mask layer on the entire structure where the filling layer is formed, and forming the mask pattern by removing some of the mask layer so that some of the plurality of patterns is removed.